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Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Kim, Taehoon | - |
dc.contributor.author | Ban, Seok-Gyu | - |
dc.contributor.author | Kim, Daesik | - |
dc.contributor.author | Lee, Jun Ho | - |
dc.contributor.author | Jur, Jesse S. | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.creator | 홍용택 | - |
dc.date.accessioned | 2019-04-24T08:30:25Z | - |
dc.date.available | 2020-04-05T08:30:25Z | - |
dc.date.created | 2018-09-06 | - |
dc.date.created | 2018-09-06 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | Advanced Materials, Vol.29 No.31, p. 1701822 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://hdl.handle.net/10371/147916 | - |
dc.description.abstract | The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p-and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p-and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm(2) V-1 s(-1), respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | en |
dc.publisher | United Nations Industrial Developement Organization | - |
dc.title | Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201701822 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000407565700027 | - |
dc.identifier.scopusid | 2-s2.0-85020498994 | - |
dc.description.srnd | OAIID:RECH_ACHV_DSTSH_NO:T201718198 | - |
dc.description.srnd | RECH_ACHV_FG:RR00200001 | - |
dc.description.srnd | ADJUST_YN: | - |
dc.description.srnd | EMP_ID:A077977 | - |
dc.description.srnd | CITE_RATE:21.95 | - |
dc.description.srnd | FILENAME:발표논문_Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.pdf | - |
dc.description.srnd | DEPT_NM:전기·정보공학부 | - |
dc.description.srnd | EMAIL:yongtaek@snu.ac.kr | - |
dc.description.srnd | SCOPUS_YN:Y | - |
dc.description.srnd | FILEURL:https://srnd.snu.ac.kr/eXrepEIR/fws/file/0eab7ced-5cea-4aaa-bbec-66369c519c97/link | - |
dc.citation.number | 31 | - |
dc.citation.startpage | 1701822 | - |
dc.citation.volume | 29 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Yongtaek | - |
dc.identifier.srnd | T201718198 | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE ELECTRONICS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ALIGNED ARRAYS | - |
dc.subject.keywordPlus | TEXTILE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FIBERS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | ROBUST | - |
dc.subject.keywordAuthor | complelentary metal-oxide-semiconductor (CMOS) integrated circuits | - |
dc.subject.keywordAuthor | deep UV irradiation | - |
dc.subject.keywordAuthor | single-walled carbon nanotubes (SWCNTs) | - |
dc.subject.keywordAuthor | thread-like fiber electronic devices | - |
dc.subject.keywordAuthor | transistors | - |
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