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Study on the double threshold switching effect in bi-layer structure of PRAM and the feasibility for multi-level operation
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- Authors
- Advisor
- 김기범
- Issue Date
- 2006
- Publisher
- 서울대학교 대학원
- Keywords
- 상변화 메모리 ; PRAM ; Ge2Sb2Te5 ; Ge2Sb2Te5 ; TiN ; TiN ; 다중 레벨 동작 ; Multi-level operation ; 이중 임계 스위칭 ; Bi-layered structure ; 직류 I-V특성 ; Double threshold switching ; 펄스 테스트 ; DC I-V characteristic ; 스퍼터 증착 ; Pulse test ; 저항 ; Sputter Deposition ; 비정질 ; Resistance ; 결정질 ; amorphous ; crystal
- Description
- Thesis(master`s)--서울대학교 대학원 :재료공학부,2006.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047514
https://hdl.handle.net/10371/14997
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