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Growth of crack-free AlGaN epitaxial layers and In-rich InGaNAlGaN quantum dots by MOCVD

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author송동우-
dc.date.accessioned2009-11-25T03:20:38Z-
dc.date.available2009-11-25T03:20:38Z-
dc.date.copyright2006.-
dc.date.issued2006-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047502eng
dc.identifier.urihttps://hdl.handle.net/10371/15098-
dc.descriptionThesis(master`s)--서울대학교 대학원 :재료공학부,2006.eng
dc.format.extent64 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject유기금속화학기상증착법eng
dc.subjectmetalorganic chemical vapor deposition (MOCVD)eng
dc.subjectAlGaNeng
dc.subjectAlGaNeng
dc.subjectInGaNeng
dc.subjectInGaNeng
dc.subject무균열eng
dc.subjectcrack-freeeng
dc.subject저온 중간층eng
dc.subjectlow-temperature interlayer (LT-IL)eng
dc.subject열역학적 분석eng
dc.subjectthermodynamic analysiseng
dc.subject양자점eng
dc.subjectquantum dot (QD)eng
dc.titleGrowth of crack-free AlGaN epitaxial layers and In-rich InGaNAlGaN quantum dots by MOCVDeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Master's Degree_재료공학부)
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