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Growth of crack-free AlGaN epitaxial layers and In-rich InGaNAlGaN quantum dots by MOCVD
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2006
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속화학기상증착법 ; metalorganic chemical vapor deposition (MOCVD) ; AlGaN ; AlGaN ; InGaN ; InGaN ; 무균열 ; crack-free ; 저온 중간층 ; low-temperature interlayer (LT-IL) ; 열역학적 분석 ; thermodynamic analysis ; 양자점 ; quantum dot (QD)
- Description
- Thesis(master`s)--서울대학교 대학원 :재료공학부,2006.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047502
https://hdl.handle.net/10371/15098
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