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AlGaN/GaN HEMT의 오믹 edge 개선과 테이퍼 소오스 비아 공정 개발
Improved edge acuity of ohmic contacts and tapered source via process of AlGaN/GaN HEMTs

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Authors
이민성
Advisor
서광석
Major
전기. 컴퓨터공학부
Issue Date
2011-08
Publisher
서울대학교 대학원
Keywords
AlGaNGaN HEMTohmic metaledge acuitybreakdown voltagetapered source viauniformity
Description
학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 서광석.
Language
kor
URI
https://hdl.handle.net/10371/159624

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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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