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AlGaN/GaN HEMT의 오믹 edge 개선과 테이퍼 소오스 비아 공정 개발
Improved edge acuity of ohmic contacts and tapered source via process of AlGaN/GaN HEMTs

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author이민성-
dc.date.accessioned2019-07-10T05:21:41Z-
dc.date.available2019-07-10T05:21:41Z-
dc.date.issued2011-08-
dc.identifier.other000000031697-
dc.identifier.urihttps://hdl.handle.net/10371/159624-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031697ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 서광석.-
dc.format.extentv, 42장-
dc.language.isokor-
dc.publisher서울대학교 대학원-
dc.subjectAlGaN-
dc.subjectGaN HEMT-
dc.subjectohmic metal-
dc.subjectedge acuity-
dc.subjectbreakdown voltage-
dc.subjecttapered source via-
dc.subjectuniformity-
dc.titleAlGaN/GaN HEMT의 오믹 edge 개선과 테이퍼 소오스 비아 공정 개발-
dc.title.alternativeImproved edge acuity of ohmic contacts and tapered source via process of AlGaN/GaN HEMTs-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation전기. 컴퓨터공학부-
dc.date.awarded2011-08-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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