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Recessed Ohmic Contact 를 이용한 AlGaN/GaN HEMT 의 성능 개선에 관한 연구 : Study on improving characteristics of AlGaN/GaN HEMTs with recessed ohmic contact

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Authors

손웅비

Advisor
서광석
Major
전기. 컴퓨터공학부
Issue Date
2011-08
Publisher
서울대학교 대학원
Keywords
AlGaNGaN HEMTRecessed Ohmic접촉저향소자수율출력전력Contact ResistanceDevice YieldOutput power
Description
학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 서광석.
Language
kor
URI
https://hdl.handle.net/10371/159630

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