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nMOS Reversible Energy Recovery Logic for Ultra-Low-Energy Applications

DC Field Value Language
dc.contributor.authorLim, Junho-
dc.contributor.authorKim, Donggyu-
dc.contributor.authorChae, Soo-Ik-
dc.date.accessioned2009-11-26T13:55:41Z-
dc.date.available2009-11-26T13:55:41Z-
dc.date.issued2000-
dc.identifier.citationIEEE J. Solid-State Circuits, vol. 35, pp.865-875en
dc.identifier.issn0018-9200-
dc.identifier.urihttps://hdl.handle.net/10371/16274-
dc.description.abstractWe propose a new fully reversible adiabatic logic,
nMOS reversible energy recovery logic (nRERL), which uses
nMOS transistors only and a simpler 6-phase clocked power. Its
area overhead and energy consumption are smaller, compared
with the other fully adiabatic logics. We employed bootstrapped
nMOS switches to simplify the nRERL circuits. With the simulation
results for a full adder, we confirmed that the nRERL circuit
consumed substantially less energy than the other adiabatic
logic circuits at low-speed operation. We evaluated a test chip
implemented with 0.8- m CMOS technology, which included
a chain of nRERL inverters integrated with a clocked power
generator. The nRERL inverter chain of 2400 stages consumed
the minimum energy at dd = 3 5 V at 55 kHz, where the
adiabatic and leakage losses are about equal, which is only 4.50%
of the dissipated energy of its corresponding CMOS circuit at
dd = 09 V. In conclusion, nRERL is more suitable than the
other adiabatic logic circuits for the applications that do not
require high performance but low energy consumption.
en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subject6-phase clocked power generatoren
dc.subjectadiabatic circuiten
dc.subjectbootstrapped switchen
dc.subjectenergy consumptionen
dc.subjectnMOS reversible energy recovery logicen
dc.titlenMOS Reversible Energy Recovery Logic for Ultra-Low-Energy Applicationsen
dc.typeArticleen
dc.contributor.AlternativeAuthor임준호-
dc.contributor.AlternativeAuthor김동규-
dc.contributor.AlternativeAuthor채수익-
dc.identifier.doi10.1109/4.845190-
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