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Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory

DC Field Value Language
dc.contributor.authorSon, Donghee-
dc.contributor.authorChae, Sue In-
dc.contributor.authorKim, Myungbin-
dc.contributor.authorChoi, Moon Kee-
dc.contributor.authorYang, Jiwoong-
dc.contributor.authorPark, Kunsu-
dc.contributor.authorKale, Vinayak S.-
dc.contributor.authorKoo, Ja Hoon-
dc.contributor.authorChoi, Changsoon-
dc.contributor.authorLee, Minbaek-
dc.contributor.authorKim, Ji Hoon-
dc.contributor.authorHyeon, Taeghwan-
dc.contributor.authorKim, Dae-Hyeong-
dc.date.accessioned2020-02-17T04:25:35Z-
dc.date.available2020-02-17T04:25:35Z-
dc.date.created2018-06-28-
dc.date.issued2016-11-
dc.identifier.citationAdvanced Materials, Vol.28 No.42, pp.9326-9332-
dc.identifier.issn0935-9648-
dc.identifier.other38117-
dc.identifier.urihttps://hdl.handle.net/10371/164308-
dc.description.abstractLarge-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleColloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory-
dc.typeArticle-
dc.contributor.AlternativeAuthor김대형-
dc.contributor.AlternativeAuthor현택환-
dc.identifier.doi10.1002/adma.201602391-
dc.citation.journaltitleAdvanced Materials-
dc.identifier.wosid000391174600008-
dc.identifier.scopusid2-s2.0-84994268357-
dc.citation.endpage9332-
dc.citation.number42-
dc.citation.startpage9326-
dc.citation.volume28-
dc.identifier.sci000391174600008-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorHyeon, Taeghwan-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusRESISTIVE MEMORY-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusPHOTOTRANSISTORS-
dc.subject.keywordAuthorcolloidal synthesis-
dc.subject.keywordAuthorflexible electronics-
dc.subject.keywordAuthorMoS2 nanosheets-
dc.subject.keywordAuthorresistive random access memory-
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  • School of Chemical and Biological Engineering
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