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Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, Donghee | - |
dc.contributor.author | Chae, Sue In | - |
dc.contributor.author | Kim, Myungbin | - |
dc.contributor.author | Choi, Moon Kee | - |
dc.contributor.author | Yang, Jiwoong | - |
dc.contributor.author | Park, Kunsu | - |
dc.contributor.author | Kale, Vinayak S. | - |
dc.contributor.author | Koo, Ja Hoon | - |
dc.contributor.author | Choi, Changsoon | - |
dc.contributor.author | Lee, Minbaek | - |
dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Hyeon, Taeghwan | - |
dc.contributor.author | Kim, Dae-Hyeong | - |
dc.date.accessioned | 2020-02-17T04:25:35Z | - |
dc.date.available | 2020-02-17T04:25:35Z | - |
dc.date.created | 2018-06-28 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | Advanced Materials, Vol.28 No.42, pp.9326-9332 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.other | 38117 | - |
dc.identifier.uri | https://hdl.handle.net/10371/164308 | - |
dc.description.abstract | Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 김대형 | - |
dc.contributor.AlternativeAuthor | 현택환 | - |
dc.identifier.doi | 10.1002/adma.201602391 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000391174600008 | - |
dc.identifier.scopusid | 2-s2.0-84994268357 | - |
dc.citation.endpage | 9332 | - |
dc.citation.number | 42 | - |
dc.citation.startpage | 9326 | - |
dc.citation.volume | 28 | - |
dc.identifier.sci | 000391174600008 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hyeon, Taeghwan | - |
dc.contributor.affiliatedAuthor | Kim, Dae-Hyeong | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordAuthor | colloidal synthesis | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | MoS2 nanosheets | - |
dc.subject.keywordAuthor | resistive random access memory | - |
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