Publications
Detailed Information
Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects
Cited 35 time in
Web of Science
Cited 44 time in Scopus
- Authors
- Issue Date
- 2008-08
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.93 No.4, p. 044102
- Abstract
- Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics.
- ISSN
- 0003-6951
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.