Browse

Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon

Cited 64 time in Web of Science Cited 74 time in Scopus
Authors
Kim, Dae-Hyeong; Ahn, Jong-Hyun; Kim, Hoon-Sik; Lee, Keon Jac; Kim, Tae-Ho; Yu, Chang-Jae; Nuzzo, Ralph G.; Rogers, John A.
Issue Date
2008-01
Citation
IEEE Electron Device Letters, Vol.29 No.1, pp.73-76
Keywords
CMOS inverterflexible circuitsthin-film transistor (TIFT)
Abstract
CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as similar to 150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.
ISSN
0741-3106
URI
http://hdl.handle.net/10371/164370
DOI
https://doi.org/10.1109/LED.2007.910770
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Chemical Convergence for Energy and Environment (에너지환경 화학융합기술전공)Journal Papers (저널논문_에너지환경 화학융합기술전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse