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Graphene Coating of Silicon Nanoparticles with CO2-Enhanced Chemical Vapor Deposition

Cited 20 time in Web of Science Cited 21 time in Scopus
Authors
Son, In Hyuk; Park, Jong Hwan; Kwon, Soonchul; Choi, Jang Wook; Ruemmeli, Mark H.
Issue Date
2016-02
Citation
Small, Vol.12 No.5, pp.658-667
Keywords
chemical vapour depositionCO2electrochemistrygrapheneSi nanoparticles
Abstract
Understanding the growth of graphene over Si species is becoming ever more important as the huge potential for the combination of these two materials becomes more apparent, not only for device fabrication but also in energy applications, particularly in Li-ion batteries. Thus, the drive for the direct fabrication of graphene over Si is crucial because indirect approaches, by their very nature, require processing steps that, in general, contaminate, damage, and are costly. In this work, the direct chemical vapor deposition growth of few-layer graphene over Si nanoparticles is systematically explored through experiment and theory with the use of a reducer, H-2 or the use of a mild oxidant, CO2 combined with CH4. Unlike the case of CH4, with the use of CO2 as a mild oxidant in the reaction, the graphene layers form neatly over the surface and encapsulate the Si particles. SiC formation is also prevented. These structures show exceptionally good electrochemical performance as high capacity anodes for lithium-ion batteries. Density functional theory studies show the presence of CO2 not only prevents SiC formation but helps enhance the catalytic activity of the particles by maintaining an SiOx surface. In addition, CO2 can enhance graphitization.
ISSN
1613-6810
URI
https://hdl.handle.net/10371/164587
DOI
https://doi.org/10.1002/smll.201502880
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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