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Quantum confinement-controlled exchange coupling in manganese(II)-doped CdSe two-dimensional quantum well nanoribbons

DC Field Value Language
dc.contributor.authorFainblat, Rachel-
dc.contributor.authorFrohleiks, Julia-
dc.contributor.authorMuckel, Franziska-
dc.contributor.authorYu, Jung Ho-
dc.contributor.authorYang, Jiwoong-
dc.contributor.authorHyeon, Taeghwan-
dc.contributor.authorBacher, Gerd-
dc.date.accessioned2020-04-27T13:52:45Z-
dc.date.available2020-04-27T13:52:45Z-
dc.date.created2020-03-17-
dc.date.issued2012-10-
dc.identifier.citationNano Letters, Vol.12 No.10, pp.5311-5317-
dc.identifier.issn1530-6984-
dc.identifier.other92737-
dc.identifier.urihttps://hdl.handle.net/10371/166209-
dc.description.abstractThe impact of quantum confinement on the exchange interaction between charge carriers and magnetic dopants in semiconductor nanomaterials has been controversially discussed for more than a decade. We developed manganese-doped CdSe quantum well nanoribbons with a strong quantum confinement perpendicular to the c-axis, showing distinct heavy hole and light hole resonances up to 300 K. This allows a separate study of the s-d and the p-d exchange interactions all the way up to room temperature. Taking into account the optical selection rules and the statistical distribution of the nanoribbons orientation on the substrate, a remarkable change in particular of the s-d exchange constant with respect to bulk is indicated. Room-temperature studies revealed an unusually high effective g-factor up to similar to 13 encouraging the implementation of the DMS quantum well nanoribbons for (room temperature) spintronic applications.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleQuantum confinement-controlled exchange coupling in manganese(II)-doped CdSe two-dimensional quantum well nanoribbons-
dc.typeArticle-
dc.contributor.AlternativeAuthor현택환-
dc.identifier.doi10.1021/nl302639k-
dc.citation.journaltitleNano Letters-
dc.identifier.wosid000309615000040-
dc.identifier.scopusid2-s2.0-84867460786-
dc.citation.endpage5317-
dc.citation.number10-
dc.citation.startpage5311-
dc.citation.volume12-
dc.identifier.sci000309615000040-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorHyeon, Taeghwan-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusSEMICONDUCTOR NANOCRYSTALS-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusOPTICAL PROPERTIES-
dc.subject.keywordPlusDOTS-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusPARAMETERS-
dc.subject.keywordPlusFIELDS-
dc.subject.keywordPlusIONS-
dc.subject.keywordAuthorDiluted magnetic semiconductors-
dc.subject.keywordAuthornanoribbons-
dc.subject.keywordAuthorspintronics-
dc.subject.keywordAuthorsp-d exchange interaction-
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  • School of Chemical and Biological Engineering
Research Area Chemistry, Materials Science

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