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Selective epitaxial growth of Si and SiGe by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) : 초고진공 화학기상증착법을 이용한 Si와 SiGe 단결정막의 선택적 성장
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- 초고진공 화학기상증착법 (UHV-CVD) ; Ultrahigh vacuum chemical vapor deposition (uhv-cvd) ; 선택적 단결정막 성장 (SEG) ; Selective epitaxial growth (seg) ; Si ; Si ; SiGe ; Sige ; 사면 ; Facet ; 등방성/비등방성 성장 ; Isotropic/anisotropic growth ; 물질 이동 ; Mass transport ; 표면 확산 ; Surface diffusion ; 자유 에너지 변화 ; Free energy change
- Description
- Thesis (doctoral)--서울대학교 대학원 :재료공학부,2003.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059508
https://hdl.handle.net/10371/16804
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