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Directional Change of Interfacial Electric Field by Carbon Insertion in Heterojunction System TiO2/WO3

Cited 4 time in Web of Science Cited 4 time in Scopus
Authors
Kim, Yong H.; Lee, Su Y.; Umh, Ha N.; Song, Hyeon D.; Han, Jeong W.; Choi, Jang Wook; Yi, Jongheop
Issue Date
2020-04
Citation
ACS Applied Materials and Interfaces, Vol.12 No.13, pp.15239-15245
Keywords
heterojunctioninterfaceelectric fieldFermi levelcarbon dopantphotocatalyst
Abstract
Z-scheme transfer is an ideal photocatalytic system with stronger redox ability, but its design and construction still lack CB understanding. Herein, the work function difference and the band bending are found to be the determining factors for the construction of the Z-scheme transfer mechanism of photoexcited charges in TiO2/WO3. The control of work function and band bending achieved by carbon insertion results from the hybridization of orbitals and redistribution of electron density, as demonstrated by ultraviolet photoelectron spectroscopy and photocatalytic analysis. The heterojunction system, TiO2/WO3, with controlled work function and band bending, shows 2 times faster (OH)-O-center dot radical formation rate (0.011 mu mol min(-1)) compared to the undisturbed system. First-principles calculation reveals that the changes in work function and band bending result in an interfacial electric field, which shifts the charge transfer mechanism from type II to Z-scheme. This work proves that the design of work function and band bending allows reconstructing charge transfer mechanism by forming the interfacial electric field in heterojunction systems.
ISSN
1944-8244
URI
https://hdl.handle.net/10371/171752
DOI
https://doi.org/10.1021/acsami.0c00669
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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