Browse

Controlling the ripple density and heights: A new way to improve the electrical performance of CVD-grown graphene

Cited 12 time in Web of Science Cited 10 time in Scopus
Authors
Park, Won-Hwa; Jo, Insu; Hong, Byung Hee; Cheong, Hyeonsik
Issue Date
2016-04
Citation
Nanoscale, Vol.8 No.18, pp.9822-9827
Abstract
We report a new way to enhance the electrical performances of large area CVD-grown graphene through controlling the ripple density and heights after transfer onto SiO2/Si substrates by employing different cooling rates during fabrication. We find that graphene films prepared with a high cooling rate have reduced ripple density and heights and improved electrical characteristics such as higher electron/hole mobilities as well as reduced sheet resistance. The corresponding Raman analysis also shows a significant decrease of the defects when a higher cooling rate is employed. We suggest a model that explains the improved morphology of the graphene film obtained with higher cooling rates. From these points of view, we can suggest a new pathway toward a relatively lower density and heights of ripples in order to reduce the flexural phonon-electron scattering effect, leading to higher lateral carrier mobilities.
ISSN
2040-3364
URI
https://hdl.handle.net/10371/172223
DOI
https://doi.org/10.1039/c6nr00706f
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse