A highly conducting graphene film with dual-side molecular n-doping
- Kim, Youngsoo; Park, Jaesung; Kang, Junmo; Yoo, Je Min; Choi, Kyoungjun; Kim, Eun Sun; Choi, Jae-Boong; Hwang, Chanyong; Novoselov, K. S.; Hong, Byung Hee
- Issue Date
- Nanoscale, Vol.6 No.16, pp.9545-9549
- Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 x 10(13) cm(-2), and the sheet resistance is as low as, similar to 86 +/- 39 Omega sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.
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