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Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

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Authors
Kang, Su Hyoung; Kang, Sangmin; Park, Seong Chae; Park, Jong Bo; Jung, Youngjin; Hong, Byung Hee
Issue Date
2018-08
Citation
Nanoscale, Vol.10 No.31, pp.14819-14823
Abstract
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays. However, solid diffusion of a-IGZO to other layers during TFT device fabrication highly degrades their electrical and optical properties. It is expected that the diffusion-impenetrable properties of graphitic materials can be utilized as diffusion barriers. A conventional transfer method and direct growth on TFTs with high temperature are limited due to wet transfer conditions and low T-g (similar to 540 degrees C) of the glass substrates, respectively. Here we report the large-scale transfer-free growth of thin graphite films at low temperature (similar to 350 degrees C) for solid diffusion barriers in the a-IGZO TFTs using plasma enhanced chemical vapor deposition (PECVD), which can be widely used to protect solid-diffusion for sustainable and scalable future industrial technology.
ISSN
2040-3364
URI
https://hdl.handle.net/10371/172234
DOI
https://doi.org/10.1039/c8nr03842b
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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