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Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

Cited 24 time in Web of Science Cited 25 time in Scopus
Authors
Roh, Jeongkyun; Cho, In-Tak; Shin, Hyeonwoo; Baek, Geun Woo; Hong, Byung Hee; Lee, Jong-Ho; Jin, Sung Hun; Lee, Changhee
Issue Date
2015-11
Citation
Nanotechnology, Vol.26 No.45, p. 455201
Keywords
molybdenum disulfideCYTOP passivationfield-effect transistors
Abstract
We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (Delta V-HYS similar to 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability with time (similar to 50 days) of MoS2 FETs with (or without) CYTOP encapsulation. The extracted lifetime of the device with CYTOP passivation in air was dramatically improved from 7 to 377 days, and even for the short-term bias stability, the experimental threshold voltage shift, outstandingly well-matched with the stretched exponential function, indicates that the device without passivation has approximately 25% larger the barrier distribution (Delta E-B = k(B)T(o)) than that of a device with passivation. This work suggests that CYTOP encapsulation can be an efficient method to isolate external gas (O-2 and H2O) effects on the electrical performance of FETs, especially with low-dimensional active materials like MoS2.
ISSN
0957-4484
URI
https://hdl.handle.net/10371/172244
DOI
https://doi.org/10.1088/0957-4484/26/45/455201
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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