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Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates

Cited 5 time in Web of Science Cited 4 time in Scopus
Authors
Roh, Jeongkyun; Ryu, Jae Hyeon; Baek, Geun Woo; Jung, Heeyoung; Seo, Seung Gi; An, Kunsik; Jeong, Byeong Guk; Lee, Doh C.; Hong, Byung Hee; Bae, Wan Ki; Lee, Jong-Ho; Lee, Changhee; Jin, Sung Hun
Issue Date
2019-02
Citation
Small, Vol.15 No.7, p. 1803852
Keywords
field-effect transistorslogic gateMoS2quantum-dot light-emitting diodethreshold voltage control
Abstract
In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of approximate to 45% of 1/2 V-DD. More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m(-2) at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application.
ISSN
1613-6810
URI
https://hdl.handle.net/10371/172284
DOI
https://doi.org/10.1002/smll.201803852
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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