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Highly stable Si MOSFET-type humidity sensor with ink-jet printed graphene quantum dots sensing layer
DC Field | Value | Language |
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dc.contributor.author | Jeong, Yujeong | - |
dc.contributor.author | Hong, Seongbin | - |
dc.contributor.author | Jung, Gyuweon | - |
dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Park, Jinwoo | - |
dc.contributor.author | Kim, Donghee | - |
dc.contributor.author | Choi, Yong Seok | - |
dc.contributor.author | Bae, Jong-Ho | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.accessioned | 2022-04-18T04:11:45Z | - |
dc.date.available | 2022-04-18T04:11:45Z | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.created | 2021-07-09 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.citation | Sensors and Actuators, B: Chemical, Vol.343, p. 130134 | - |
dc.identifier.issn | 0925-4005 | - |
dc.identifier.other | 137436 | - |
dc.identifier.uri | https://hdl.handle.net/10371/178073 | - |
dc.description.abstract | This paper investigates humidity sensing characteristics of a silicon metal oxide semiconductor field effect transistor (Si MOSFET)-based humidity sensor having horizontal floating-gate (FG) interdigitated with controlgate (CG). The sensing material of the humidity sensor is graphene quantum dots (GQDs), deposited locally on the interdigitated CG-FG area by an ink-jet printing method using a small amount of the GQDs solution. The humidity sensing characteristics of the sensor are measured as a parameter of relative humidity (RH). The response of the humidity sensor is 78 % to the humid air of 81.3 % RH. We also adopt a pulsed pre-bias method to improve the response and recovery characteristics of the humidity sensor. The response and recovery characteristics of the sensor can be improved 30 % and 40 % respectively by applying a pre-bias of 2 V and -1 V to the CG. In all relative humidity ranges, the FET-type humidity sensor has highly stable and reproducible characteristics in long-term measurements for 5 months. | - |
dc.language | 영어 | - |
dc.publisher | Elsevier BV | - |
dc.title | Highly stable Si MOSFET-type humidity sensor with ink-jet printed graphene quantum dots sensing layer | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.contributor.AlternativeAuthor | 이종호 | - |
dc.identifier.doi | 10.1016/j.snb.2021.130134 | - |
dc.citation.journaltitle | Sensors and Actuators, B: Chemical | - |
dc.identifier.wosid | 000663572200007 | - |
dc.identifier.scopusid | 2-s2.0-85106388118 | - |
dc.citation.startpage | 130134 | - |
dc.citation.volume | 343 | - |
dc.identifier.sci | 000663572200007 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Ho | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordAuthor | FET-type gas sensor | - |
dc.subject.keywordAuthor | Humidity sensor | - |
dc.subject.keywordAuthor | Graphene quantum dots (GQDs) | - |
dc.subject.keywordAuthor | Pulsed pre-bias | - |
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