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Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

Cited 25 time in Web of Science Cited 27 time in Scopus
Authors

Kim, Jihoon; Seung, Hyojin; Kang, Dohun; Kim, Joodeok; Bae, Hyeonhu; Park, Hayoung; Kang, Sungsu; Choi, Changsoon; Choi, Back Kyu; Kim, Ji Soo; Hyeon, Taeghwan; Lee, Hoonkyung; Kim, Dae-Hyeong; Shim, Sangdeok; Park, Jungwon

Issue Date
2021-11-10
Publisher
American Chemical Society
Citation
Nano Letters, Vol.21 No.21, pp.9153-9163
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/179068
DOI
https://doi.org/10.1021/acs.nanolett.1c02991
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