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Spontaneous generation of charged atoms or clusters during thermal evaporation of silver

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Authors

Jeon, In-Deok; Kim, Doh-Yeon; Hwang, Nong-Moon

Issue Date
2022-01
Publisher
Hanser Publishers
Citation
International Journal of Materials Research, Vol.96 No.2, pp.186-190
Abstract
Spontaneous generation of charged atoms or clusters was investigated during thermal evaporation of silver. For this, the effect of the applied electric bias on the film growth rate was examined during evaporation of silver at 1373 K in a tungsten basket. Film growth rates on three silicon substrates biased + 300, 0 and -300 V with respect to the chamber were 300, 420 and 960 nm per hour, respectively. The number density of generated positively-charged atoms or clusters could be measured by the electric current on the Faraday cup in the chamber. From the temperature dependence of the positive current, the activation energy for charging was determined to be similar to 2.2 eV. This value could be best explained by the surface ionization of clusters of a few atoms on the oxidized tungsten surface.
ISSN
1862-5282
URI
https://hdl.handle.net/10371/179462
DOI
https://doi.org/10.3139/ijmr-2005-0032
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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