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Effects of lithium doping and ultraviolet photo-patterning on electrical properties of InGaZnO thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Jang, Jongsu | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.date.accessioned | 2022-05-20T00:47:10Z | - |
dc.date.available | 2022-05-20T00:47:10Z | - |
dc.date.created | 2020-06-30 | - |
dc.date.created | 2020-06-30 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | Thin Solid Films, Vol.707, p. 138098 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://hdl.handle.net/10371/179918 | - |
dc.description.abstract | Alkali metals, such as Li and Na, have been added in solution-processed oxide thin-film transistors (TFTs) because they improved electrical characteristics of the oxide TFTs. In previous research, however, fine-patterning of the alkali metal-doped oxide layers was not performed due to potential performance degradation during photolithography process. In this work, we demonstrate ultraviolet (UV) photo-patterned solution-processed indium gallium zinc oxide (IGZO) TFTs containing various amount of lithium (Li). For patterning of active layer, we applied deep UV (184 nm, 10% and 254 nm, 90%) photo-patterning process. We also investigated the chemical composition and bonding structures of the Li doped IGZO (Li-IGZO) films. It was found that appropriate Li doping on IGZO films can reduce oxygen vacancies and improved the coordination of the metal-oxygen bonding. In addition, Li-IGZO TFTs showed improved mobility and bias stability compared to un-doped counterparts. We believe that this simple patterning process and Li doping can be applied to other types of the high-performance solution-processed oxide TFTs. | - |
dc.language | 영어 | - |
dc.publisher | Elsevier Sequoia | - |
dc.title | Effects of lithium doping and ultraviolet photo-patterning on electrical properties of InGaZnO thin film transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2020.138098 | - |
dc.citation.journaltitle | Thin Solid Films | - |
dc.identifier.wosid | 000539311200006 | - |
dc.identifier.scopusid | 2-s2.0-85084941993 | - |
dc.citation.startpage | 138098 | - |
dc.citation.volume | 707 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Yongtaek | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Lithium doping | - |
dc.subject.keywordAuthor | Ultraviolet photo-patterning | - |
dc.subject.keywordAuthor | Solution-process | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.subject.keywordAuthor | Indium gallium zinc oxide | - |
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