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Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks

Cited 20 time in Web of Science Cited 19 time in Scopus
Authors

Hwang, Sungmin; Yu, Junsu; Lee, Geun Ho; Song, Min Suk; Chang, Jeesoo; Min, Kyung Kyu; Jang, Taejin; Lee, Jong-Ho; Park, Byung-Gook; Kim, Hyungjin

Issue Date
2022-04
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Electron Device Letters, Vol.43 No.4, pp.549-552
Abstract
IEEEIn this work, we present a hardware neural network with capacitor-based synaptic devices. A capacitor-based synaptic device was developed using a MOS capacitor structure with a charge trapping layer. Due to the flat band voltage shift by charge trapping and its non-linear C-V characteristics, multilevel weight values could be implemented by the charge occurring when charging and discharging the capacitor. The vector-matrix multiplication (VMM) function was also experimentally verified using a fabricated synapse array based on NAND flash structure.
ISSN
0741-3106
URI
https://hdl.handle.net/10371/183708
DOI
https://doi.org/10.1109/LED.2022.3149029
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