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Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides
Cited 23 time in
Web of Science
Cited 23 time in Scopus
- Authors
- Issue Date
- 2022-01
- Publisher
- American Chemical Society
- Citation
- Nano Letters, Vol.22 No.2, pp.726-732
- Abstract
- Photolithography and electron-beam lithography are the most common methods for making nanoscale devices from semiconductors. While these methods are robust for bulk materials, they disturb the electrical properties of two-dimensional (2D) materials, which are highly sensitive to chemicals used during lithography processes. Here, we report a resist-free lithography method, based on direct laser patterning and resist-free electrode transfer, which avoids unintentional modification to the 2D materials throughout the process. We successfully fabricate large arrays of field-effect transistors using MoS2 and WSe2 monolayers, the performance of which reflects the properties of the pristine materials. Furthermore, using these pristine devices as a reference, we reveal that among the various stages of a conventional lithography process, exposure to a solvent like acetone changes the electrical conductivity of MoS2 the most. This new approach will enable a rational design of reproducible processes for making large-scale integrated circuits based on 2D materials and other surface-sensitive materials.
- ISSN
- 1530-6984
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