Publications
Detailed Information
Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kannan Udaya Mohanan | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2022-08-06T08:25:46Z | - |
dc.date.available | 2022-08-06T17:27:57Z | - |
dc.date.issued | 2022-07-05 | - |
dc.identifier.citation | Nanoscale Research Letters,17(1):63 | ko_KR |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | https://doi.org/10.1186/s11671-022-03701-8 | - |
dc.identifier.uri | https://hdl.handle.net/10371/184242 | - |
dc.description.abstract | Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and components need to be renovated to make a way out of the conventional software-driven artificial intelligence. In this work, we investigate the hardware performances of PIM architecture that can be presumably constructed by resistive-switching random-access memory (ReRAM) synapse fabricated with a relatively larger thermal budget in the full Si processing compatibility. By introducing a medium-temperature oxidation in which the sputtered Ge atoms are oxidized at a relatively higher temperature compared with the ReRAM devices fabricated by physical vapor deposition at room temperature, higher device reliability has been acquired. Based on the empirically obtained device parameters, a PIM architecture has been conceived and a system-level evaluations have been performed in this work. Considerations include the cycle-to-cycle variation in the GeOx ReRAM synapse, analog-to-digital converter resolution, synaptic array size, and interconnect latency for the system-level evaluation with the Canadian Institute for Advance Research-10 dataset. A fully Si processing-compatible and robust ReRAM synapse and its applicability for PIM are demonstrated. | ko_KR |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT of Korea (MSIT) under the Grant Number of 2021M3F3A2A01037927. | ko_KR |
dc.language.iso | en | ko_KR |
dc.publisher | Springer Open | ko_KR |
dc.subject | Medium-temperature oxidation | - |
dc.subject | Germanium oxide | - |
dc.subject | Resistive-switching random-access memory (ReRAM) | - |
dc.subject | Low-power hardware neural network | - |
dc.subject | Processing-in-memory (PIM) | - |
dc.title | Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | ko_KR |
dc.type | Article | ko_KR |
dc.identifier.doi | 10.1186/s11671-022-03701-8 | ko_KR |
dc.citation.journaltitle | Nanoscale Research Letters | ko_KR |
dc.language.rfc3066 | en | - |
dc.rights.holder | The Author(s) | - |
dc.date.updated | 2022-07-10T03:20:12Z | - |
dc.citation.number | 1 | ko_KR |
dc.citation.startpage | 63 | ko_KR |
dc.citation.volume | 17 | ko_KR |
- Appears in Collections:
- Files in This Item:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.