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Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Bae, Jong-Ho | - |
dc.contributor.author | Kwon, Dongseok | - |
dc.contributor.author | Koo, Ryun-Han | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kwon, Daewoong | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.accessioned | 2022-08-25T01:15:23Z | - |
dc.date.available | 2022-08-25T01:15:23Z | - |
dc.date.created | 2022-06-15 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.43 No.6, pp.958-961 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/184427 | - |
dc.description.abstract | We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semiconductor (TiN/HfZrO2/SiO2/n(+) Si). In the high-resistance state, 1/f noise increases proportionally to 1/(WL beta)-L-alpha(alpha congruent to 1, beta > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence on L scaling than W scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2022.3168797 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000800191500035 | - |
dc.identifier.scopusid | 2-s2.0-85128625839 | - |
dc.citation.endpage | 961 | - |
dc.citation.number | 6 | - |
dc.citation.startpage | 958 | - |
dc.citation.volume | 43 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, Byung-Gook | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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