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A Sub-1 ppm/degrees C CMOS Bandgap Voltage Reference With Process Tolerant Piecewise Second-Order Curvature Compensation

DC Field Value Language
dc.contributor.authorAhn, Yongjoon-
dc.contributor.authorKim, Suhwan-
dc.contributor.authorLee, Hyunjoong-
dc.date.accessioned2022-10-17T04:26:39Z-
dc.date.available2022-10-17T04:26:39Z-
dc.date.created2022-10-06-
dc.date.issued2020-09-
dc.identifier.citationInternational System on Chip Conference, pp.231-235-
dc.identifier.issn2164-1676-
dc.identifier.urihttps://hdl.handle.net/10371/186208-
dc.description.abstractThis paper presents a CMOS high-precision bandgap voltage reference. To obtain low temperature coefficient (TC) regardless of process variation, piecewise second-order curvature compensation method is proposed. Curvature compensation current is generated through current subtraction and current squaring operation with two currents with different dependence on temperature. Also, several circuit techniques are adopted to achieve compensate error sources. Chopping technique is utilized to cancel 1/f noise and DC offset of the error amplifier. Trimming resistor is used to compensate process variation. The bandgap reference is designed in a 0.13 mu m CMOS process. Post layout simulation shows that TC of the bandgap reference is 0.64ppm/degrees C over a wide temperature range of -40 degrees C to 125 degrees C. Moreover, sub-1 ppm/degrees C TC is achieved irrespective of process variation after two-point temperature trimming. The bandgap reference consumes 44 mu A at 27 degrees C and layout size is 0.0534mm(2).-
dc.language영어-
dc.publisherIEEE Computer Society-
dc.titleA Sub-1 ppm/degrees C CMOS Bandgap Voltage Reference With Process Tolerant Piecewise Second-Order Curvature Compensation-
dc.typeArticle-
dc.identifier.doi10.1109/SOCC49529.2020.9524787-
dc.citation.journaltitleInternational System on Chip Conference-
dc.identifier.wosid000783541200041-
dc.identifier.scopusid2-s2.0-85115345447-
dc.citation.endpage235-
dc.citation.startpage231-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Suhwan-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
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