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Highly-packed self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Hyun-Seok | - |
dc.contributor.author | Lee, Jihye | - |
dc.contributor.author | Kim, Boram | - |
dc.contributor.author | Lee, Jaehong | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kim, Yoon | - |
dc.contributor.author | Hong, Suck Won | - |
dc.date.accessioned | 2022-10-17T04:27:15Z | - |
dc.date.available | 2022-10-17T04:27:15Z | - |
dc.date.created | 2022-09-29 | - |
dc.date.issued | 2022-10 | - |
dc.identifier.citation | Nanotechnology, Vol.33 No.43, p. ac805d | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186256 | - |
dc.description.abstract | © 2022 IOP Publishing Ltd.Resistive random-access memories (RRAMs) based on metal-oxide thin films have been studied extensively for application as synaptic devices in neuromorphic systems. The use of graphene oxide (GO) as a switching layer offers an exciting alternative to other materials such as metal-oxides. We present a newly developed RRAM device fabricated by implementing highly-packed GO layers on a highly doped Si wafer to yield a gradual modulation of the memory as a function of the number of input pulses. By using flow-enabled self-assembly, highly uniform GO thin films can be formed on flat Si wafers in a rapid and simple process. The switching mechanism was explored through proposed scenarios reconstructing the density change of the sp2 cluster in the GO layer, resulting in a gradual conductance modulation. We analyzed that the current in a low resistance state could flow by tunneling or hopping via clusters because the distance between the sp2 clusters in closely-packed GO layers is short. Finally, through a pattern-recognition simulation with a Modified National Institute of Standards and Technology database, the feasibility of using close-packed GO layers as synapse devices was successfully demonstrated. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Highly-packed self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6528/ac805d | - |
dc.citation.journaltitle | Nanotechnology | - |
dc.identifier.wosid | 000834589300001 | - |
dc.identifier.scopusid | 2-s2.0-85135454175 | - |
dc.citation.number | 43 | - |
dc.citation.startpage | ac805d | - |
dc.citation.volume | 33 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, Byung-Gook | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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