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Influence of Gate to Drain Underlap on Negative Differencial Resistance in Ferroelectric FET
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- Authors
- Issue Date
- 2020-06
- Publisher
- IEEE
- Citation
- 2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), pp.95-96
- Abstract
- The negative differential resistance in ferroelectric FET was investigated through TCAD device simulation. The gate to drain underlap forms depletion effectively during drain sweep, negative differential resistance is observed remarkably in the large gate to drain underlap.
- ISSN
- 2161-4636
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