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Methodology to Predict Random Telegraph Noise Induced Threshold Voltage Shift Using Machine Learning
Cited 2 time in
Web of Science
Cited 3 time in Scopus
- Authors
- Issue Date
- 2020-04
- Publisher
- IEEE
- Citation
- 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), p. 9117805
- Abstract
- We suggest the methodology to predict the distribution of threshold voltage (V-t) shift caused by random telegraph noise (RTN). Poly-silicon channels were randomized with a single trap and the neural network was modeled to predict RTN trap-induced Vt fluctuation in 3D NAND Flash Memory. 3D Technology Computer-Aided Design (TCAD) simulations were performed in a unit cell to calculate the Vt shift in a 3D vertical channel. Finally, we extract the distribution of Vt fluctuation using machine learning.
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