Publications
Detailed Information
Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses
Cited 1 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Issue Date
- 2019-06
- Publisher
- IEEE
- Citation
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.69-70
- Abstract
- This paper presents switching characteristics of Ni/HfOx/p(+)-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.
- ISSN
- 2161-4636
- Files in This Item:
- There are no files associated with this item.
- Appears in Collections:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.