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A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Woo Young | - |
dc.contributor.author | Yoon, Gyuhan | - |
dc.contributor.author | Chung, Woo Young | - |
dc.contributor.author | Cho, Younghoon | - |
dc.contributor.author | Shin, Seongun | - |
dc.contributor.author | Ahn, Kwang Ho | - |
dc.date.accessioned | 2022-10-26T07:21:12Z | - |
dc.date.available | 2022-10-26T07:21:12Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | Micromachines, Vol.10 No.4, p. 256 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://hdl.handle.net/10371/186759 | - |
dc.description.abstract | A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure. | - |
dc.language | 영어 | - |
dc.publisher | Multidisciplinary Digital Publishing Institute (MDPI) | - |
dc.title | A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/mi10040256 | - |
dc.citation.journaltitle | Micromachines | - |
dc.identifier.wosid | 000467772100042 | - |
dc.identifier.scopusid | 2-s2.0-85065902357 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 256 | - |
dc.citation.volume | 10 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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