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Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches

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dc.contributor.authorChoi, Woo Young-
dc.contributor.authorKwon, Hyug Su-
dc.date.accessioned2022-10-26T07:21:12Z-
dc.date.available2022-10-26T07:21:12Z-
dc.date.created2022-10-20-
dc.date.issued2019-04-
dc.identifier.citationIEEE Transactions on Electron Devices, Vol.66 No.4, pp.2040-2043-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://hdl.handle.net/10371/186760-
dc.description.abstractA novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of nanoelectromechanical (NEM) memory switches for the implementation of monolithic 3-D (M3D) CMOS-NEM hybrid reconfigurable logic (RL) circuits. According to the theoretical calculation and experimental data, the proposed "slingshot" pull-in operation lowers V-DD of the NEM memory switches by similar to 0.84 times. It contributes to the overall V-DD reduction and chip density boost of M3D CMOS-NEM RL circuits.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleSlingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2019.2899888-
dc.citation.journaltitleIEEE Transactions on Electron Devices-
dc.identifier.wosid000461838600068-
dc.identifier.scopusid2-s2.0-85063271526-
dc.citation.endpage2043-
dc.citation.number4-
dc.citation.startpage2040-
dc.citation.volume66-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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