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Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Woo Young | - |
dc.contributor.author | Kwon, Hyug Su | - |
dc.date.accessioned | 2022-10-26T07:21:12Z | - |
dc.date.available | 2022-10-26T07:21:12Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, Vol.66 No.4, pp.2040-2043 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186760 | - |
dc.description.abstract | A novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of nanoelectromechanical (NEM) memory switches for the implementation of monolithic 3-D (M3D) CMOS-NEM hybrid reconfigurable logic (RL) circuits. According to the theoretical calculation and experimental data, the proposed "slingshot" pull-in operation lowers V-DD of the NEM memory switches by similar to 0.84 times. It contributes to the overall V-DD reduction and chip density boost of M3D CMOS-NEM RL circuits. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2019.2899888 | - |
dc.citation.journaltitle | IEEE Transactions on Electron Devices | - |
dc.identifier.wosid | 000461838600068 | - |
dc.identifier.scopusid | 2-s2.0-85063271526 | - |
dc.citation.endpage | 2043 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 2040 | - |
dc.citation.volume | 66 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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