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Nanoelectromechanical Nonvolatile Memory Cells with Scaled Beam Dimensions
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Woo Young | - |
| dc.date.accessioned | 2022-10-26T07:21:19Z | - |
| dc.date.available | 2022-10-26T07:21:19Z | - |
| dc.date.created | 2022-10-20 | - |
| dc.date.issued | 2017-10 | - |
| dc.identifier.citation | Journal of Nanoelectronics and Optoelectronics, Vol.12 No.10, pp.1134-1136 | - |
| dc.identifier.issn | 1555-130X | - |
| dc.identifier.uri | https://hdl.handle.net/10371/186769 | - |
| dc.description.abstract | In order to confirm the scalability of the nanoelectromechanical (NEM) nonvolatile memory cell, the lateral size of a bit-line (BL) beam is scaled down to 50 nm, using the photoresist ashing process. For low operation voltages, a cantilever beam was adopted as a BL beam design. Titanium nitride was used as the structural material, and amorphous silicon was used as the sacrificial material. | - |
| dc.language | 영어 | - |
| dc.publisher | American Scientific Publishers | - |
| dc.title | Nanoelectromechanical Nonvolatile Memory Cells with Scaled Beam Dimensions | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1166/jno.2017.2112 | - |
| dc.citation.journaltitle | Journal of Nanoelectronics and Optoelectronics | - |
| dc.identifier.wosid | 000419957000016 | - |
| dc.identifier.scopusid | 2-s2.0-85041127918 | - |
| dc.citation.endpage | 1136 | - |
| dc.citation.number | 10 | - |
| dc.citation.startpage | 1134 | - |
| dc.citation.volume | 12 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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