Publications
Detailed Information
Improved compact model for double-gate tunnel field-effect transistors by the rigorous consideration of gate fringing field
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sangwan | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:21Z | - |
dc.date.available | 2022-10-26T07:21:21Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, Vol.56 No.8, p. 084301 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186772 | - |
dc.description.abstract | In this work, the accuracy of a compact current-voltage (I-V) model for double-gate n-channel tunnel field-effect transistors (TFETs) is improve by considering outer and inner gate fringing field effects. The refined model is benchmarked against technology computer-aided design (TCAD) device simulations and compared against a previously published compact model. The normalized root-mean-square error for current in the linear region of operation (i.e., for 0.05V drain voltage) is reduced from similar to 593 to similar to 5%. (C) 2017 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Improved compact model for double-gate tunnel field-effect transistors by the rigorous consideration of gate fringing field | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.56.084301 | - |
dc.citation.journaltitle | Japanese Journal of Applied Physics | - |
dc.identifier.wosid | 000405068900001 | - |
dc.identifier.scopusid | 2-s2.0-85026450679 | - |
dc.citation.number | 8 | - |
dc.citation.startpage | 084301 | - |
dc.citation.volume | 56 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.