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Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jang Woo | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:22Z | - |
dc.date.available | 2022-10-26T07:21:22Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.17 No.2, pp.271-276 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186773 | - |
dc.description.abstract | The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation. | - |
dc.language | 영어 | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability | - |
dc.type | Article | - |
dc.identifier.doi | 10.5573/JSTS.2017.17.2.271 | - |
dc.citation.journaltitle | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.identifier.wosid | 000406938600018 | - |
dc.identifier.scopusid | 2-s2.0-85018737429 | - |
dc.citation.endpage | 276 | - |
dc.citation.number | 2 | - |
dc.citation.startpage | 271 | - |
dc.citation.volume | 17 | - |
dc.identifier.kciid | ART002216909 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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