A sub-0.5 V operating RF low noise amplifier using tunneling-FET

Abstract

60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET's unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW. (C) 2017 The Japan Society of Applied Physics