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Influence of the Source Doping Concentration on the Subthreshold Swing (S) of Tunneling Field-Effect Transistors (TFETs)
DC Field | Value | Language |
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dc.contributor.author | Huh, In | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:29Z | - |
dc.date.available | 2022-10-26T07:21:29Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, Vol.16 No.10, pp.10241-10246 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186783 | - |
dc.description.abstract | The subthreshold swing (S) of tunneling field-effect transistors (TFETs) has been modeled by using the Landauer formula, Wentzel-Kramers-Brillouin (WKB) approximation, Kane's two band k . p model and Fermi-Dirac statistics. From the proposed model, it has been observed that TFET characteristics are determined by the Fermi-Dirac distribution in the subthreshold region and by the tunneling probability in the saturation region. Thus, higher source doping concentration leads to higher on-current thanks to the increase of tunneling probability. However, at the same time, high source doping concentration can make TFETs suffer from the metal-oxide-semiconductor FET (MOSFET)-like constant S due to the tail of the Fermi-Dirac distribution. Based on our proposed model, the design guideline has been proposed to optimize the source doping concentration. | - |
dc.language | 영어 | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Influence of the Source Doping Concentration on the Subthreshold Swing (S) of Tunneling Field-Effect Transistors (TFETs) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.13135 | - |
dc.citation.journaltitle | Journal of Nanoscience and Nanotechnology | - |
dc.identifier.wosid | 000387100600014 | - |
dc.identifier.scopusid | 2-s2.0-84990986091 | - |
dc.citation.endpage | 10246 | - |
dc.citation.number | 10 | - |
dc.citation.startpage | 10241 | - |
dc.citation.volume | 16 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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