Influence of Electron and Hole Distribution on 2T SONOS Embedded NVM

Abstract

The influence of electron and hole (EH) distribution on two-transistor (2T) silicon-oxidenitride-oxide-silicon (SONOS) embedded nonvolatile memory (eNVM) is investigated in terms of reliability. As PE (program/erase) cycles are repeated, it is observed that the electron distribution in the nitride layer becomes wider. It leads to the EH distribution mismatch, which degrades the reliability of 2T SONOS eNVM.