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Multi-Bit Nano-Electromechanical Nonvolatile Memory Cells (Zigzag T Cells) for the Suppression of Bit-to-Bit Interference
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- Authors
- Issue Date
- 2016-05
- Publisher
- American Scientific Publishers
- Citation
- Journal of Nanoscience and Nanotechnology, Vol.16 No.5, pp.5164-5167
- Abstract
- Multi-bit nano-electromechanical (NEM) nonvolatile memory cells such as T cells were proposed for higher memory density. However, they suffered from bit-to-bit interference (BI). In order to suppress BI without sacrificing cell size, this paper proposes zigzag T cell structures. The BI suppression of the proposed zigzag T cell is verified by finite-element modeling (FEM). Based on the FEM results, the design of zigzag T cells is optimized.
- ISSN
- 1533-4880
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