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Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Kyoung Min | - |
dc.contributor.author | Lee, Won-Sok | - |
dc.contributor.author | Lee, Keun-Ho | - |
dc.contributor.author | Park, Young-Kwan | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:37Z | - |
dc.date.available | 2022-10-26T07:21:37Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, Vol.62 No.4, pp.1353-1356 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186795 | - |
dc.description.abstract | The novel effects of preferred gate metal grain orientation on tunneling FETs (TFETs) have been investigated for the first time. It has been observed that TFETs have preferred gate metal grain orientation to lower work-function variation (WFV) unlike MOSFETs. In the case of TFETs, when the metal gate grain orientation with low work function is dominant, the WFV is effectively suppressed. This brief provides a design guideline for the suppression of TFET WFV. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2015.2399018 | - |
dc.citation.journaltitle | IEEE Transactions on Electron Devices | - |
dc.identifier.wosid | 000351753900041 | - |
dc.identifier.scopusid | 2-s2.0-84926355377 | - |
dc.citation.endpage | 1356 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 1353 | - |
dc.citation.volume | 62 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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