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Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Cited 10 time in Web of Science Cited 9 time in Scopus
Authors

Jeong, Woo Jin; Kim, Tae Kyun; Moon, Jung Min; Park, Min Gyu; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Woo Young; Shin, Mincheol; Lee, Seok-Hee

Issue Date
2015-03
Publisher
Institute of Physics Publishing
Citation
Semiconductor Science and Technology, Vol.30 No.3, p. 035021
Abstract
A germanium tunnel field-effect transistor (TFET) with a bias-induced electron-hole bilayer (EHB) with double gates that are symmetrically arranged and independently biased is simulated. The symmetric double gate scheme is feasible, presenting a simple EHB-TFET structure that is practicable for industrial fabrication. According to simulation results, the improvement of on/off current ratio of similar to 10(8) is achieved by inserting a lightly-doped drain-source (LDD) region. Also, fin-type EHB-TFETs show an extremely low average sub-threshold swing of 11 mV/decade over 4 decades at V-DD = 0.5 V, and thus are suitable for ultra-low power applications.
ISSN
0268-1242
URI
https://hdl.handle.net/10371/186796
DOI
https://doi.org/10.1088/0268-1242/30/3/035021
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