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Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate
Cited 12 time in
Web of Science
Cited 10 time in Scopus
- Authors
- Issue Date
- 2015-03
- Publisher
- Institute of Physics Publishing
- Citation
- Semiconductor Science and Technology, Vol.30 No.3, p. 035021
- Abstract
- A germanium tunnel field-effect transistor (TFET) with a bias-induced electron-hole bilayer (EHB) with double gates that are symmetrically arranged and independently biased is simulated. The symmetric double gate scheme is feasible, presenting a simple EHB-TFET structure that is practicable for industrial fabrication. According to simulation results, the improvement of on/off current ratio of similar to 10(8) is achieved by inserting a lightly-doped drain-source (LDD) region. Also, fin-type EHB-TFETs show an extremely low average sub-threshold swing of 11 mV/decade over 4 decades at V-DD = 0.5 V, and thus are suitable for ultra-low power applications.
- ISSN
- 0268-1242
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