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Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells
Cited 1 time in
Web of Science
Cited 1 time in Scopus
- Authors
- Issue Date
- 2014-11
- Citation
- IEEE Transactions on Nanotechnology, Vol.13 No.6, pp.1102-1106
- Abstract
- The influence of fringe field on nano-electromechanical (NEM) memory cells has been investigated. Because fringe field effects become stronger with cells scaling down, it becomes more difficult to predict the characteristics of small-sized NEM memory cells accurately. In this paper, fringe field effects have been included into a finite-element model. The dependence of fringe field effects on cell parameters has also been evaluated.
- ISSN
- 1536-125X
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