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On-State Resistance Instability of Programmed Antifuse Cells during Read Operation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Jae Hwan | - |
| dc.contributor.author | Lee, Hyunjin | - |
| dc.contributor.author | Kim, Wansoo | - |
| dc.contributor.author | Yoon, Gyuhan | - |
| dc.contributor.author | Choi, Woo Young | - |
| dc.date.accessioned | 2022-10-26T07:21:42Z | - |
| dc.date.available | 2022-10-26T07:21:42Z | - |
| dc.date.created | 2022-10-20 | - |
| dc.date.issued | 2014-10 | - |
| dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.5, pp.503-507 | - |
| dc.identifier.issn | 1598-1657 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/186801 | - |
| dc.description.abstract | The on-state resistance (R-ON) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the R-ON increases as time passes during read operation. | - |
| dc.language | 영어 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | On-State Resistance Instability of Programmed Antifuse Cells during Read Operation | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.5573/JSTS.2014.14.5.503 | - |
| dc.citation.journaltitle | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.identifier.wosid | 000346137400002 | - |
| dc.identifier.scopusid | 2-s2.0-84937192031 | - |
| dc.citation.endpage | 507 | - |
| dc.citation.number | 5 | - |
| dc.citation.startpage | 503 | - |
| dc.citation.volume | 14 | - |
| dc.identifier.kciid | ART001923344 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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