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Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Boram | - |
| dc.contributor.author | Choi, Woo Young | - |
| dc.date.accessioned | 2022-10-26T07:21:42Z | - |
| dc.date.available | 2022-10-26T07:21:42Z | - |
| dc.date.created | 2022-10-20 | - |
| dc.date.issued | 2014-10 | - |
| dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.5, pp.609-614 | - |
| dc.identifier.issn | 1598-1657 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/186802 | - |
| dc.description.abstract | The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated. | - |
| dc.language | 영어 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.5573/JSTS.2014.14.5.609 | - |
| dc.citation.journaltitle | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.identifier.wosid | 000346137400016 | - |
| dc.identifier.scopusid | 2-s2.0-84908332779 | - |
| dc.citation.endpage | 614 | - |
| dc.citation.number | 5 | - |
| dc.citation.startpage | 609 | - |
| dc.citation.volume | 14 | - |
| dc.identifier.kciid | ART001923441 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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