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A Finite Element Model for Bipolar Resistive Random Access Memory

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dc.contributor.authorKim, Kwanyong-
dc.contributor.authorLee, Kwangseok-
dc.contributor.authorLee, Keun-Ho-
dc.contributor.authorPark, Young-Kwan-
dc.contributor.authorChoi, Woo Young-
dc.date.accessioned2022-10-26T07:21:43Z-
dc.date.available2022-10-26T07:21:43Z-
dc.date.created2022-10-20-
dc.date.issued2014-06-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.3, pp.268-273-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://hdl.handle.net/10371/186803-
dc.description.abstractThe forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.-
dc.language영어-
dc.publisher대한전자공학회-
dc.titleA Finite Element Model for Bipolar Resistive Random Access Memory-
dc.typeArticle-
dc.identifier.doi10.5573/JSTS.2014.14.3.268-
dc.citation.journaltitleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.identifier.wosid000338934400002-
dc.identifier.scopusid2-s2.0-84903703647-
dc.citation.endpage273-
dc.citation.number3-
dc.citation.startpage268-
dc.citation.volume14-
dc.identifier.kciidART001887458-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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