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Dual random circuit breaker network model with equivalent thermal circuit network

DC Field Value Language
dc.contributor.authorKim, Kwanyong-
dc.contributor.authorYoon, Seong Jun-
dc.contributor.authorChoi, Woo Young-
dc.date.accessioned2022-10-26T07:21:44Z-
dc.date.available2022-10-26T07:21:44Z-
dc.date.created2022-10-20-
dc.date.issued2014-01-
dc.identifier.citationApplied Physics Express, Vol.7 No.2, p. 024203-
dc.identifier.issn1882-0778-
dc.identifier.urihttps://hdl.handle.net/10371/186805-
dc.description.abstractA SPICE-based dual random circuit breaker (RCB) network model with an equivalent thermal circuit network has been proposed in order to emulate resistance switching (RS) of unipolar resistive random access memory (RRAM). The dual RCB network model consists of the electrical RCB network model for the forming and set operations and the equivalent thermal circuit network model for the reset operation. In addition, the proposed model can explain the effects of heat dissipation on the memory and threshold RS with the variation in electrode thickness. (C) 2014 The Japan Society of Applied Physics-
dc.language영어-
dc.publisherJapan Soc of Applied Physics-
dc.titleDual random circuit breaker network model with equivalent thermal circuit network-
dc.typeArticle-
dc.identifier.doi10.7567/APEX.7.024203-
dc.citation.journaltitleApplied Physics Express-
dc.identifier.wosid000331454000033-
dc.identifier.scopusid2-s2.0-84893240560-
dc.citation.number2-
dc.citation.startpage024203-
dc.citation.volume7-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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