Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Abstract

Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (g(m)) and current drivability than SiO2-only TFETs and g(m) less sensitive to gate voltage than high-k-only TFETs.